Looking into the dark forest of GaAs/GaInP nanowires imaged by SEM. The nanowires were grown in two steps: first the GaAs stem using a Au particle as seed particle in MOVPE. The sample was removed from the reactor and a layer of HSQ resist was applied by spinning, forming a thin layer of moss. When the GaInP was grown during a second MOVPE step, the resist prevented growth on the substrate and sidewalls of the GaAs stems. The image is artificially colorized, but based on EDS measurements; light green represents GaInP and light brown/red GaAs. The substrate and base of GaAs nanowires has a dark green color to represent the areas where thicker resist was detected. – Daniel Jacobsson, Lund University


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